Cheng, Yuhua

Professor

Research Interests: Advanced analog/mixed-signal/RF integrated circuits for system integration applications

Office Phone: 86-21-6109 1006-816

Email: chengyh@pku.edu.cn

Cheng, Yuhua received the BSEE, MSEE, and Ph.D. EE degrees in Shandong Polytechnic University (Now Shandong University), Tianjin University, and Tsinghua University, China in 1982, 1985 and 1989, respectively. In 1990, he joined in the Institute of Microelectronics (IME), Peking University, China. From 1992 to 1996, he was an associate professor in IME. He is now with Peking University, as a full professor.

Dr. Cheng has served on many Technical Program Committees and chaired numerous Sub-committees at international conferences, including the IEEE Custom Integrated Circuits Conference (CICC) (from 2002 to 2005) and Radio Frequency Integrated Circuits Symposium (since 2002). He organized and participated in numerous workshops and panels related to RFCMOS technology and SoC design. He has authored and co-authored over 160 research papers, two book chapters, two books “MOSFET Modeling & BSIM3 User’s Guide” by Kluwer Academic Publishers (1999), and “Device modeling for analog/RF circuit design” by John Wiley and Sons (2002). He was a Guest Editor for IEEE Journal of Solid-State Circuits. He is an IEEE Fellow and a member of both Electronic Device Society (EDS) and Solid-state Circuit Society (SSCS). His research interests include smart power discrete semiconductor devices and advanced analog/mixed-signal/RF integrated circuits for system integration applications.

Dr.Cheng was the principal developer to BSIM3v3 (Yuhua Cheng, et al., BSIM3v3 User's Manual, UC Berkeley, UCB/ERL M97/2, 1997). Due to Dr. Cheng’s efforts, the discontinuity problems, considered as a major shortcoming in BSIM models, were resolved in BSIM3v3, while many new physical effects were implemented. BSIM3v3 has been used worldwide by foundries and design companies for IC simulation. It was selected as the first MOSFET model for compact model standardization effort for IC simulation by Electronics Industry Association/Compact Model Council and given an R&D 100 Award in 1996.

Since 2006, Dr. Cheng has been conducting research on ESD for more than 10 years, which has made significant achievements, which resulted in more than 30 research papers. He shared with the IC industry his research results in international conferences and journals including IEEE Journal of Solid-state Circuits, IEEE Trans. On Electron Devices, and IEEE Electron Devices Letters.