Du, Gang

Professor

Research Interests: Semiconductor Device Modeling and Simulation

Office Phone: 86-10-6275 5233

Email: gangdu@pku.edu.cn

Du, Gang is a professor in the Institute of Microelectronics, School of EECS, Peking University. He received the B.S. degree and Ph.D. degree in microelectronics from Peking University, Beijing, China, in 1998 and 2002 respectively. In 2003, he joined the Institute of Microelectronics, Peking University.

Dr. Du is the author or coauthor of more than 200 journal and conference papers. His current research interests include Monte Carlo simulation method for nanoscale devices, Carrier quasi-ballistic transport effect, Joule heat generating and the self-heating effect in nanoscale devices, MOSFET compact model parameter extraction and Novel structure MOSFET modeling.

Dr. Du has more than ten research projects including NSFC, 973 programs, 863 project, etc. His research achievements are summarized as follows:

1)  Simulation of nanoscale devices. He has developed a 3D full band Monte Carlo method with effective potential quantum correction for nanoscale devices simulation, and a parallelized 3D ensemble full band Monte Carlo device simulator is built to investigate quasi-ballistic transport effect in nanoscale MOSFETs. Heat transfer equation is also resolved to investigate self-heating effect. He also developed a device simulator by using directly solving Boltzmann transport equation.

2)  NVM device simulation. A self-consistent two-dimensional (2-D) simulator with unified physical models for different operation regimes of charge trapping memory is developed. in this simulator associated tunnelling processes, charge trapping/de-trapping mechanisms, and 2-D drift-diffusion transport in the storage layer are carefully involved. This simulator is deemed a useful tool for accurately assessing 3-D NAND flash memory device characteristics.