Kang, Jinfeng

Professor

Research Interests: Nano devices for computing and data storage, brain-inspired computing, resistive switching devices (ReRAM)

Office Phone: 86-10-6275 6745

Email: kangjf@pku.edu.cn

Kang, Jinfeng received his B.S. degree in physics from Dalian University of Technology in 1984, and M.S. and Ph.D degrees in solid-state electronics & microelectronics from Peking University in 1992 and 1995 respectively. From 1996 to 1997 he worked on the new oxides applications in microelectronics at Institute of Microelectronics in Peking University as a post-doctoral fellow. In 1997 he joined the faculty first as an associate professor then professor in 2001. From 2002 to 2003, he was invited to work on high-k/metal gate technology at SNDL in National University of Singapore as a visiting professor. He is now a Full Professor of Electronics Engineering Computer Science School in Peking University. His research interest is to explore novel device concepts, structures, materials, circuits, and the system architectures for the applications of future computing and data storage systems.

He has published over 300 conference and journal papers, and was speaker of more than 20 invited talks to international conferences, societies, academia, and industry such as IEDM, ESSDERC, MRS, ASP-DAC, SSDM, ISCAS, AMAT, IMEC, IBM, DSI. His publications have been cited more than 2500 total citations excluding self-citations (h-index: 27) including 3 ESI papers. He has over 110 filed and 60 issued Chinese patents and 7 issued U.S. patents. He was ever awarded with 2nd Prize of National Award for Science and Technology Progress, 1st Prize of Ministry of Education Science and Technology Progress, and 1st Prize of Beijing Technology Innovation. He serves Editor of IEEE Transactions on Electron Devices (2016-present), IEDM PMT Sub-Committee Member (2013, 2014), VLSI-TSA Asia Pacific Subcommittee Member: 2009-present), IAB Member of CIMTEC (2016,2018). Through his mentorship, many of his former students have won IEEE Awards, including 3 IEEE EDS PhD Student Fellowships and 7 IEEE EDS Masters Student Fellowships.

His accomplishments focus on the resistive switching access memory (ReRAM) technology and applications, including:

1. He proposed a unified physical mechanism to clarify the underlying physics of various resistive switching behaviors of Oxide-based ReRAM. The proposed mechanism can well explain the physical origins of resistive switching behaviors and essential device characteristics measured in oxide-based ReRAM correlated with material properties, device structures and operation schemes.

2. He developed the material- and operation scheme-oriented methodologies to optimize device performances of ReRAM. The proposed methodologies have been widely cited for the design guideline of the optimized materials, device structures, and operation schemes of ReRAM.

3. He developed the physics-based Monte-Carlo (MC) simulation tools and physics-based compact models of oxide-based ReRAM and CBRAM to simulate and capture the essential device characteristics. The developed MC simulation tools and compact models have been used to bridge the gap between device physics and in-depth device-circuit design and co-optimization for applications from memory systems to brain-inspired computing system.

4. He explored integration approaches of 2D/3D RRAM arrays and the potential implementations for unified memory-computing architecture and RRAM-based synapses for neurormorphic computing system.