Wang, Jinyan
Professor
Research Interests: Wide-bandgap semiconductor based microwave and power switching devices
Office Phone: 86-10-6275 2579
Email: wangjinyan@pku.edu.cn
Wang, Jinyan is a professor in the Department of Micro/Nano electronics, School of EECS since 2011. He obtained his B.Eng. and M.Eng. from Xidian University in 1993 and 1996, Ph.D. from Peking University in 2000. His research interests include wide-bandgap semiconductor based microwave and power switching devices, Semiconductor devices physics and modeling, characterization.
Dr. Wang has published more than 30 SCI/EI research papers published in journals, such as IEEE EDL, APL, EL, JJAP, SSE and SST, etc.. He has served as Chair of IEEE EDS Beijing Chapter, the contactor of IEE University Liaison in China. He was awarded as First Prize for Science & Technology Development/Achievement of the Ministry of Education (2009), First Prize for Beijing science and Technology (2008).
Dr. Wang has more than ten research projects including NSFC, 973 programs, 863 project, National Key Project, etc. His research achievements are summarized as follows:
1) Microwave and power switching GaN-based device: Major research interests in GaN-based device field focus on novel device structure, process technique and integration technologies. He proposed Self-terminating Thermal Oxidation assisted Wet Etching Technique (STOAWET) for AlGaN/GaN heterostructure, solving the problem of lack of practical and effective wet-etching method for Ga-faced GaN-based material, which has been used for the fabrication of enhanced-mode recess-gated GaN MOSHEMT. The first paper was published in IEEE EDL (2013), reported by the Semiconductor-Today Magazine (2013). Subsequently, serial papers about the physical mechanisms, E/D inverter and ring oscillator based on STOAWET were published in IEEE EDL, EL. He also proposed novel device structures, including multi Ti/Al layers based Ohmic alloy and composite gate oxide structures for GaN-based HEMT with excellent performance.
2) Physical mechanisms and reliability of wide-bandgap semiconductor device: The works in this field are the key to further performance improvement and practical mass-production of GaN-based HEMT. He found the physical mechanisms of the gate leakage current of the Schottky contact on the mesa edge of AlGaN/GaN HEMT, Ni-Au alloy cluster induced bulges on the surface of Ti/Al/Ni/Au Ohmic contact, the formation of buffer breakdown paths, surface damages of AlGaN/GaN by thermal oxidation and ICP, etc..
3) GaN-based detectors and integration technologies: Due to the advantages of working at high temperature, stability in acid/alkali-base and radiation environment of GaN-based material, the GaN-based detectors have shown some unique advanced performance. He proposed and fabricated a high temperature detector of GaN-based ring oscillator (E/D invertor) with working temperature beyond 300oC. The further work focuses on the integration system of detecting and microwave signal emitting, with realization of different types of detection, such as optical, gas and biology signals.
Representative major research papers published in recent years (As correspondence author):
1. Locally nonuniform oxidation in self-terminating thermal oxidation assisted wet etching technique for AlGaN/GaN heterostructure, Liu, J.; Wang, J.; Xu, Z.; Jiang, H.; Yang, Z.; Wang, M.; Yu, M.; Xie, B.; Wu, W.; Ma, X.; Zhang, J.; Hao, Y., Electronics Letters, Vol.51, No. 23, 2015, pp. 1932
2. Investigation of oxidation process in self-terminating gate recess wet etching technique for AlGaN/GaN normally-off MOSFETs, Jingqian Liu, Jinyan Wang, Zhe Xu, Haisang Jiang, Zhenchuan Yang, Maojun Wang, Min Yu, Bing Xie, Wengang Wu, Xiaohua Ma, Jincheng Zhang and Yue Hao, ELECTRONICS LETTERS, Vol.50, No. 25, 2014, pp. 1980-1982
3. Demonstration of Normally-Off Recess-Gated AlGaN/GaN MOSFET Using GaN Cap Layer as Recess Mask, Zhe Xu, Jinyan Wang, Jingqian Liu, Chunyan Jin, Yong Cai, Zhenchuan Yang, Maojun Wang, Min Yu, Bing Xie, Wengang Wu, Xiaohua Ma, Jincheng Zhang, and Yue Hao, IEEE ELECTRON DEVICE LETTERS, VOL. 35, NO. 12, DECEMBER 2014, pp.1197
4. Enhancement Mode (E-Mode) AlGaN/GaN MOSFET With 10-13 A/mm Leakage Current and 1012 ON/OFF Current Ratio, Zhe Xu, Jinyan Wang, Yong Cai, Jingqian Liu, Chunyan Jin, Zhenchuan Yang, Maojun Wang, Min Yu, Bing Xie, Wengang Wu, Xiaohua Ma, Jincheng Zhang, and Yue Hao, IEEE ELECTRON DEVICE LETTERS, VOL. 35, NO. 12, DECEMBER 2014, pp.1200
5. High Temperature Characteristics of GaN-Based Inverter Integrated With Enhancement-Mode (E-Mode) MOSFET and Depletion-Mode (D-Mode) HEMT, Zhe Xu, Jinyan Wang, Yong Cai, Jingqian Liu, Zhen Yang, Xiaoping Li, Maojun Wang, Min Yu, Bing Xie, Wengang Wu, Xiaohua Ma, Jincheng Zhang, and Yue Hao, IEEE ELECTRON DEVICE LETTERS, VOL. 35, NO. 1, JANUARY 2014, pp.33
6. 300°C operation of normally off AlGaN/GaN MOSFET with low leakage current and high on/off current ratio, Zhe Xu, Jinyan Wang, Yong Cai, Jingqian Liu, Zhen Yang, Xiaoping Li, Maojun Wang, Zhenchuang Yang, Bin Xie, Min Yu, Wengang Wu, Xiaohua Ma, Jincheng Zhang and Yue Hao, ELECTRONICS LETTERS, February 2014, Vol. 50, No. 4, pp. 315–316
7. A novel method for measuring parasitic resistance in high electron mobility transistors, Zhen Yang, Jinyan Wang, Xiaoping Li, Bo Zhang, Jian Zhao, Zhe Xu, Maojun Wang, Min Yu, Zhenchuan Yang, Wengang Wu, Yuming Zhang, Jincheng Zhang, Xiaohua Ma, and Yue Hao, Solid-State Electronics, Volume 100, October 2014, Pages 27–32
8. Fabrication of Normally Off AlGaN/GaN MOSFET Using a Self-Terminating Gate Recess Etching Technique, Zhe Xu, Jinyan Wang, Yang Liu, Jinbao Cai, Jingqian Liu, Maojun Wang, Min Yu, Bing Xie, Wengang Wu, Xiaohua Ma, and Jincheng Zhang, IEEE ELECTRON DEVICE LETTERS, VOL. 34, NO. 7, JULY 2013, pp.855
9. Enhanced device performance of AlGaN/GaN high electron mobility transistors with thermal oxidation treatment, Shenghou Liu, Jinyan Wang, Rumin Gong, Shuxun Lin, Zhihua Dong, Min Yu, C. P. Wen, Chunhong Zeng, Yong Cai, Baoshun Zhang, Fujun Xu, Jincheng Zhang, and Bo Shen, Japanese Journal of Applied Physics, vol. 50 no. 4, 04DF10-1, 2011
10. High temperature induced failure in Ti/Al/Ni/Au Ohmic contacts on AlGaN/GaN heterostructure, Zhihua Dong, Jinyan Wang, C.P. Wen, Shenghou Liu, Rumin Gong, Min Yu, Yilong Hao, Fujun Xu, Bo Shen, Yangyuan Wang, Microelectronics Reliability, 24 October 2011, ISSN 0026-2714, 10.1016
11. A High Breakdown Voltage AlGaN/GaN MOSHEMT Using Thermal Oxidized Al-Ti as the Gate Insulator, Zhou Bin and Wang Jin- Yan and Meng Di and Lin Shu-Xun and Fang Min and Dong Zhi-Hua and Yu Min and Hao Yi-Long and Cheng P. Wen, Chinese Physics Letters, Vol.28, No.10, pp.107303, 2011
12. Analysis of surface roughness in Ti/Al/Ni/Au Ohmic contact to AlGaN/GaN high electron mobility transistors, Rumin Gong, Jinyan Wang, Shenghou Liu, Zhihua Dong, Min Yu, Cheng P. Wen, Yong Cai, and Baoshun Zhang, APPLIED PHYSICS LETTERS 97, 062115, 2010
13. Analysis on the new mechanisms of low-resistance stacked Ti/Al Ohmic contact structure on AlGaN/GaN HEMTs, Rumin Gong, Jinyan Wang, Zhihua Dong, Shenghou Liu, Min Yu, Cheng P. Wen, Yong Cai, Baoshun Zhang and Jincheng Zhang, Journal of Physics D: Applied Physics, 43(2010) 395102
14. Enhanced Device Performance of AlGaN/GaN MOSHEMT with Thermal Oxidation, S. Liu, J. Wang,R. Gong, Z. Dong,M. Yu,C. P. Wen,C. Zeng,Y. Cai,B. Zhang, 2010 International Conference on Solid State Devices and Materials (SSDM2010), TokyoJapan
15. High breakdown AlGaN/GaN MOSHEMT with thermal oxidized Ni/Ti as gate insulator, Zhihua Dong, Jinyan Wang, C.P. Wen, Danian Gong, Ying Li, Min Yu, Yilong Hao, Fujun Xu, Bo Shen, Yangyuan Wang, Solid-State Electronics 54 (2010) 1339– 1342
16. The Leakage Current of the Schottky Contact on the Mesa Edge of AlGaN/GaN Heterostructure, Chuan Xu, Jinyan Wang, Hongwei Chen, Fujun Xu, Zhihua Dong, Yilong Hao, and Cheng P. Wen, IEEE ELECTRON DEVICE LETTERS, VOL. 28, NO. 11, NOVEMBER 2007, p. 942
17. Reeves's circular transmission line model and its scope of application to extract specific contact resistance, Xu, Chuan; Wang, Jinyan; Wang, Maojun; Jin, Haiyan; Hao, Yilong; Wen, Cheng P., Solid-State Electronics, v 50, n 5, May, 2006, p843-847
18. Persistent Photoconductivity in n-type GaN, DENG Dong-mei, WANG Jin-yan, ZHAO De-gang, WEN Zheng, SEMICONDUCTOR PHOTONICS AND TECHNOLOGY, Vol.12 No.2 P.77-80, 2006
