Yu, Min

Associate Professor

Research Interests: Semiconductor device and processing

Office Phone: 86-10-6276 5795

Email: yum@pku.edu.cn

YU, Min is an associated professor in the Department of Microelectronics, School of EECS, Peking University. He obtained His B.Sc in Material Physics from Beijing Normal University in 1996, M. Sc in Solid State Physics from Beijing Normal University in 1999, and Ph. D. in Microelectronics from Peking University in 2005 respectively. His research interests include semiconductor devices and its processing.

Dr. YU has published more than 60 research papers, focusing on the Si radiation detectors, bonding technology，modeling and simulation on the ion implantation and annealing as well as plasma etching. He got the first prizes of Scientific and Technological Progress issued by the Ministry of Education in 2009 and 2017.

His research achievements are summarized as follows:

1.  He studied the evolution of defects for low energy ion-implantation. His study reveals that the Ostwald ripening of cluster defects can suppress the surface annihilation of interstitials which may induce enhanced diffusion of dopant during post-implantation annealing, which provide the new point of view on the understanding the enhanced diffusion for low energy implantation.

2.  He studied the mechanism of Si interstitial annihilation at Si surface. It is proposed that the surface diffusion of interstitial play an important role. This can explain further the evolution of extended defects in the vicinity of surface, which provides a deep understanding for the defects evolution mechanism.

3.  The molecular dynamic method simulation is successfully applied to the plasma doping induced dopant profiles. The simulation results agree well with the measured depth profiles. This provides a method to predict the plasma doping results.

4.  The tin was applied successfully as the intermediate layer for Aluminum coated silicon wafer bonding. It provides a fast and low temperature whole wafer bonding technology for aluminum based wafer packaging technology.

5.  A new structure of PIN detector is presented for fast neutron detection. The tilt of PIN structure extend the effective intrinsic layer width largely and can be used to enhance the detection sensitivity.