Wang, Xingjun

Professor

Research Interests: Silicon photonics

Office Phone: 86-10-6276 7911

Email: xjwang@pku.edu.cn

Wang, Xingjun is a professor in the Department of Electronics, School of EECS. He obtained his B.E., M.E. and Ph.D. degrees from the Dalian University of Technology, China in 1999, 2002 and 2005, respectively. From 2007 to 2009, he was a JSPS postdoctoral follow in Department of Electronic Engineering, University of Electro-Communications, Japan. In 2009, he joined Peking University, and is currently a full professor at Peking University. His research interests include the Si based light source and Si optoelectronic integration chip for high speed optical communication.

Dr. Wang has published more than 150 papers on international journals and conference proceedings. Advanced Materials, Applied Physics letter, Optics Letters, Optics Express, Journal of Applied Physics, IEEE Photonics Technology Letters etc. 70 papers have been SCI indexed. The citation reaches 700 times. Now he is the lead guest editor for a special issue of Micro/Nano photonics in Advances in Condensed Matter Physics. In 2013, he was selected New Century Excellent Talents by Ministry of Education, China, In 2015, he was selected first Young Chang Jiang Scholar by Ministry of Education.

Dr. Wang has more than ten research projects including NSFC, 973 programs, 863 project, etc. His research achievements are summarized as follows:

1) Silicon based light source: High efficient Er silicate light materials and high gain optical amplifier (3 Appl. Phys. Lett, 1 Opt. Lett. 1 J. Appl. Lett. 1 IEEE Photo. Tech. Lett.) Electrical pump Er silicate light emission diode (2 J. Appl. Lett. 3 Opt. Mater).

2) Silicon based integrated photonics chips for high speed optical communications, the minimum phase deviation 90 degree silicon hybrid based on wedge-shaped waveguide structure (Opt. Express, and ACP conferenc post-deadline). The most efficient modulation Silicon MZI modulator and BPSK, QPSK phase modulator (3 Opt.Express). The successful implementation of active and passive optoelectronic devices integration, including 1D grating, 2D grating, modulators, detectors, mixers, and polarization beam splitter/combiners. Realize silicon 100 Gb/s transmission rate based on Si integrated transmission and receiving chip. (1 JJAP and 5 international conference invited talks)