Zhang, Xing
Professor
Research Interests: Nano-scale CMOS device, model and simulation
Office Phone: 86-10-6276 7859
Email: zhx@pku.edu.cn
Zhang, Xing is a professor in the Department of Microelectronics, School of EECS. He obtained his B.Sc. from Nanjing University in 1986, M.Sc and Ph.D. from Shaanxi Institute of Microelectronics in 1989 and 1993, respectively. His research interests include nano-scale CMOS device, non-classical Si device, model and simulation, and reliability.
Dr. Zhang has published more than 200 research papers, such as EDL, TED, APL, IEDM, and also published 3 books. Dr. Zhang has applied more than 100 China invention patents. He has served in the Committee of experts of national science and technology major project of “Ultra-large scale integrated circuit manufacturing equipment and process”. He is serving as a member of electronics science and technology group of discipline appraisal group of the academic degrees Committee of the state council. He is a deputy director of semiconductor and integrated technology branch of Chinese electronic society. He is in the Editorial Board of Science Bulletin, Journal of Semiconductors, Acta Scientiarum Naturalium Universitatis, Microelectronics, and Microelectronics & computer. He won over 10 research and teaching awards, such as the second prize of National technology invention award in 2010 and the second prize of National teaching achievement award in 2014, etc. He was a recipient of National Science Foundation for Distinguished Young Scholars of China in 2010. He was a Chief Scientist of three 973 programs. Dr. Zhang has more than 20 research projects, such as 973 programs, NSFC, etc.
His research achievements are summarized as follows:
1. High mobility MOSFET device techniques: High mobility MOSFET devices are very promising as future CMOS devices. He proposed series of technique solutions to relax the challenges faced by high quality Ge-nMOSFET device fabrication, including post-implantation impurity segregation technique, interface control technique and surface passivation.
2. Device model and simulation: This is a key tool to research and predict the nanoscale semiconductor device performance. He developed several physical and compact models for nanoscale semiconductor devices, including nano-scale double gate MOSFET, nanoscale FinFet, and oxide based RRAM devices. Electrical characteristics of nanoscale devices were simulated.
3. Device reliability: One major research topic in nanoscale device field is to make the nanoscale device high reliable. He investigated the degeneration and the radiation-resistant characteristics of nanoscale quasi-SOI, FinFet and RRAM devices, and developed new solutions for improving the devices reliability.
