Yang, Zhenchuan

Professor

Research Interests: MEMS, optofluidics

Office Phone: 86-10-6276 9376

Email: z.yang@pku.edu.cn

Yang, Zhenchuan is a professor in the Department of Microelectronics, School of EECS. He received the B.S. degree at the Department of Computer Science & Technology, Peking University in 1998, and the Ph.D degree at the School of Electronics Engineering and Computer Science, Peking University in 2004, respectively. Then he worked as a research associate with the Department of Electrical & Electronics Engineering (Now the Department of Electronic & Computer Engineering), Hong Kong University of Science & Technology from 2004 to 2006. Then, he joined the Department of Microelectronics, School of EECS. His research interests include MEMS inertial sensors, GaN-based MEMS and optofluidics.

Dr. Yang has published more than 100 research papers, many of them are published in top-tier conferences and journals, such as MEMS, Transducers, IEDM, JMEMS, JMM, IEEE EDL, APL. He held more than 10 China patents. He has served in the Technical Program Committee of Optofluidics 2017, and the guest editor of Biomicrofluidics in 2015.  

Dr. Yang has more than ten research projects. His research achievements are summarized as follows:

1)  MEMS inertial sensors: Monolithic integration of multiple-axis inertial sensors is one major research topic of MEMS inertial sensors. To integrate high-aspect-ratio bulk micromachined inertial sensors, he proposed a vertical comb capacitor for out-of-plane accelerometers and in-plane gyroscopes, and developed two fabrication processes based on silicon-on-glass and silicon-on-insulator respectively. These vertical comb capacitors have also been used for intentional out-of-plane actuation or suppression of parasitic vertical forces. He also proposed control methods for closed-loop control and mode-matching of tuning fork gyroscopes, resulting in prototype of sub degree-per-house MEMS gyroscope.

2)  GaN-based MEMS: GaN (gallium nitride)-based MEMS devices have drawn attentions for harsh environment applications. Dr. Yang proposed a GaN-on-patterned silicon fabrication process based on selective area growth to get GaN MEMS structures with common silicon micromachining facilities. He also developed a GaN-on-silicon process with the combination of anisotropic and isotropic silicon substrate etching to get free-standing GaN MEMS structures. He realized the monolithic integration of AlGaN/GaN HEMT and MEMS structures. He also firstly demonstrated the Young’s modulus characterization with beam-bending and ring-down respectively.