Wang, Maojun

Associate Professor

Research Interests: Wide band gap semiconductors

Office Phone: 86-10-6275 0419

Email: mjwang@pku.edu.cn

Wang, Maojun is an associate professor in the Institute of Microelectronics, School of EECS. He obtained his B.Sc. from Nanjing University in 2002, and Ph.D. from Peking University in 2007, respectively. His research interests focused on the electronic devices based on wide band gap semiconductors.

Dr. Wang has published more than 40 research papers, including top-tier journals and conferences in the area of electronic devices, such as EDL, TED, APL, JAP, ISPSD and IEDM. 

Dr. Wang has been in charge of several research projects including NSFC, national science and technology major project, national key R&D program of china, etc. His research achievements are summarized as follows:

1)      Device physics and technology for enhancement mode operation in GaN HEMT: Enhancement mode operation is critical for the commercialization of GaN HEMT in high voltage and high frequency power applications. He has revealed the background mechanism in the fluorine based plasma treatment for E-mode operation and developed several advanced fabrication process for gate-recessed E-mode GaN FET, including digital gate recess, plasma free self-terminated gate recess, post recess channel protection, etc.

2)      Breakdown mechanism in GaN FET: For power application, BFOM is one of the critical parameter influencing the ultimate performance of the switches. For the first time, he has proposed the source-injection induced breakdown mechanism in GaN HEMT, which successfully explained the low BV of GaN in early days. Device technology has been developed to improve the blocking characteristics of GaN HEMT, such as enhanced back barrier, AlGaN buffer layer, and step graded field plate.