Liu, Xiaoyan

Professor

Research Interests: Modeling and simulation of physical phenomena in the field of microelectronics.

Office Phone: 86-10-6275 6793

Email: liuxiaoyan@pku.edu.cn

Liu, Xiaoyan is a professor in the Department of Microelectronics, and has served as the Director of Beijing Engineering Research Center of Active Matrix Display since 2013. She obtained her B.Sc., M.Sc. and PhD. from Peking University in 1988, 1991 and 2001 respectively. Her research interests include modeling and simulation of physical phenomena in the field of microelectronics.

Dr. Liu has published more than 200 research papers with H index 19, and most of them are published in top-tier conferences and journals, such as IEDM, VLSI symposium, IEEE EDL, and IEEE TED. She has coauthored 3 books on microelectronics and TFT LCD. She has served in the Technical Program Committee of international conferences including IEDM. She is also in the Editorial Board of Journal of Semiconductor since 2010. She was selected as Education Ministry's New Century Excellent Talents Supporting Plan in 2006.

Dr. Liu has more than ten research projects including NSFC, 973 programs, 863 project, and 6 cooperation projects with Huawei, Samsung and Fujistu etc. Her research achievements are summarized as follows:

1. Modeling and simulation of new generation memory: She proposed Monte Carlo method to simulate the switch behavior of OxRRAM and CBRAM. The evolution of microcosmic features during the resistive switching and the reliability degradation process can be reproduced along with the corresponding electrical characteristics. She developed a physics model based compact model for OxRRAM and CBRAM. She proposed method to simulate the charge trapping memory from cell to array. The method can help to well understand the CTM characteristics such as the charge loss, retention, disturb and their impact to the array performance.

2. Simulation method for nano-scale semiconductor devices: With the continuous down scaling of the CMOS devices, device simulation becomes more and more challenges due to the quantum effect, quasi ballistic transport and the using of new materials and non planar structures. She focused on the carriers transport model and Monte Carlo method for nano-scale semiconductor devices with new structures and new materials. She proposed methods to simulate tunneling effect, screening effect, self-heating effect, trap behaviors, spin transport, discrete impurity scattering, electron-electron scattering. These methods can improve the accuracy and efficiency of Monte Carlo device simulation.