Liu, Lifeng
Professor
Research Interests: Resistive switching materials and devices, oxide materials and devices
Office Phone: 86-10-6276 6593
Email: lfliu@pku.edu.cn
Liu, Lifeng is a professor in the Department of Microelectronics, School of EECS. He obtained his B.E. and M.E. from Hebei University of Technology in 1999, and 2002, respectively, and Ph.D. from Institute of Semiconductors, Chinese Academy of Sciences in 2005. His research interests include resistive switching materials and devices, oxide materials and devices.
Dr. Liu has published more than 100 journal and conference papers, such as Advanced Materials(AM), ACS Nano, IEEE Electron Devices Letters(EDL), IEEE Transactions on Electron Devices(TED), Applied Physics Letters(APL), Symposium on VLSI Technology(VLSI), International Electron Devices Meeting(IEDM), etc. Dr. Liu hold 30 China invention patents and 4 U.S invention patents. He has served reviewer for several international journals, including EDL, TED. Dr. Liu has over 10 research projects including NSFC, 973 programs, 863 project. His research achievements are summarized as follows:
1) Design and optimization of resistive switching materials: Many oxide materials have resistive switching effects under appropriate voltage or current pulse, showing great application potential in memory, nonvolatile logic and neuromorphic computing. He designed and optimized several metal-oxide based resistive switching materials with excellent switching uniformity, including CeO2, ZnO, ZrO2, HfO2, and explained the resistive switching mechanism based on the oxygen vacancy filament conducting model.
2) Resistive switching memory and optimization: Resistive random access memory (RRAM) has been extensively studied as one of the most promising candidates for the new generation of memory technology. Seeking effective way to control RRAM device performance is the major challenge for the RRAM application. He proposed ion doping technique and new device operation schemes to optimize the resistive switching stability and endurance characteristics of oxide based RRAM.
3) Synaptic device: Neuromorphic computing is an attractive computation paradigm that complements Von Neumann architecture. Oxide base resistive switching device is one of promising candidates for realizing the synaptic function. He developed an electric synapse with three-dimensional vertical structure by using oxide based resistive switching device, exhibiting the application potential, such as low operation current, gradual resistance transition, and good repeatability.
