LI, Ming

Professor

Research Interests: Microelectronics

Office Phone:

Email: liming.ime@pku.edu.cn

LI, Ming is a professor with the Department of Micro-&Nano-Electronics, School of EECS, Peking University. He obtained B.Sc. and Master from Beijing Normal University in 1997 and 2000, and Ph.D. from Peking University in 2003 respectively. He joined in Samsung Electronics in 2003 and worked for 32nm and 22nm VLSI technology development and next-generation CMOS technology research. After 2011, he joined in Peking University. His research interests now include nano-CMOS technology and beyond-CMOS device for new computing and biosensor.

Dr. Li has published more than 50 research papers and most of them are published in top-tier conferences and journals, such as IEDM, VLSI, EDL and T-ED. He has served as the Technical Program Chair of International Conference on Semiconductor Integrated Circuit Technology. He is serving as the guest editor of Nanotechology nanowire focus collection. He is also the reviewer of a series of professional journals including IEEE EDL, T-ED, T-Nanotechnology, Scientific Report, Transaction on Device and Materials Reliability, Science China etc. He has also held more than 20 US patents.

Dr. Li has worked for eight research projects including NSFC, 973 programs, 863 project, Key research and development plan etc. His research achievements are summarized as follows:

1．Nano-scale CMOS device technology: Aiming at the continuous scaling of CMOS technology, he proposed several novel process methods for fabricating nano-scale CMOS devices including silicon nanowire transistors, FinFET and high-mobility channel transistors. The major achievements include controllable nanowire formation by self-limiting process, self-saturated ultra-thin silicide formation using barrier layer, GIDL characterization and modeling in silicon nanowire transistors, novel silicon nanowire transistors for ESD application, TCAD optimization for FinFET and so on.

2．Ge-based CMOS technology: Ge-based channel materials including Ge, SiGe, GeSn and so on are the important solutions for the performance issues in future nano-CMOS technology. Dr. Li’s achievements in this area include solid-phase epitaxial regrowth for highly activating n-type dopant in Ge device, plasma emersion technology for interface treatment in Ge device, post-germanide dopant segregation technique for contact barrier modulation, multi-implant-multi-anneal technique for improving n-type dopant activation, plasma treatment and co-implantation for highly thermal stable germanide and so on.

Monolithic 3D IC integration: To break 2D scaling limitation, 3D integration has been the future research direction. Dr. Li focuses on the key process and device architecture research for monolithic 3D IC integration. The major achievements include low-cost high-efficient thin film process with strained capping layer and boundary limitation, vertical nanowire architecture design and process integration, core-shell nanowire transistor design and son.