An, Xia
Associate Professor
Research Interests: Novel MOS devices including device physics, simulation and process, and the radiation characteristics of nanoscale MOS devices.
Office Phone: 86-10-62767239
Email: xia.an@pku.edu.cn
An, Xia is an associate professor in the Department of Microelectronics, School of EECS. She received the B.S. degree and the M.S. degree in Microelectronics from Shandong Normal University in 1999 and 2002, respectively, and the Ph.D. degree in Microelectronics from Peking University in Jan. 2006. Her research interests mainly focus on nanoscale novel MOS devices, including device physics, simulation and process, and the radiation characteristics of nanoscale MOS devices.
Dr. An has published more than 40 research papers, some of those are published on IEEE Electron Device Letters, Applied Physics Letters, Semiconductor Science and Technology. More than 50 patents are pending, including Chinese and US patents. She is the member of editorial board of Journal of Semiconductors. She was awarded 2015 Yang Fuqing & Wang Yangyuan excellent teaching&research scholarship.
Dr. An has several research projects including National S&T Major Project 02, NSFC etc. Her research achievements are summarized as follows:
1) High mobility channel MOS devices: To enhance the n-type dopant activation in Ge, the multiple implantation technique and multiple annealing technique are proposed. High electrical activation over 1 ×1020 cm-3 is achieved and the corresponding contact resistivity is reduced to 3.8×10-7 Ω·cm2. Besides, For the high electron Schottky barrier height(SBH) due to Fermi level pinning, the implantation after germanide (IAG) technique is proposed to modulate SBH. The record-low electron SBH of 0.10 eV is obtained by IAG technique. Besides, the poor thermal stability of NiGe restricts further performance improvement of Ge MOS device. P and Sb co-implantation and novel ammonium fluoride pretreatment technique are proposed to improve the thermal stability of NiGe. The electrical characteristic of NiGe/Ge diode is also improved simultaneously. Further, the poor gate dielectric/channel interface is a bottleneck for Ge-based device performance improvement. Several passivation methods are proposed and experimentally verified, which can effectively suppress the regrowth of germanium sub-oxide and effectively reduce the interface state density.
2) Radiation characteristics of nanoscale MOS devices: The irradiation environment significantly degrade the performance of devices and circuits, even resulting in the function failure. The radiation characteristics of ultra deep sub-micro and nanoscale MOS devices are investigated. New radiation effect phenomena are observed and the corresponding mechanism are illustrated. A novel radiation-hardened STI structure is proposed. The radiation characteristics of novel device structure such as quasi-SOI, AGLDD double gate devices are firstly demonstrated, which show great potential for space application. The results provide guideline for the radiation-hardened design.
